D. A. Zuev, A. A. Lotin, O. A. Novodvorskii, F. V. Lebedev, O. D. Khramova, I. A. Petukhov, F. N. Putilin, A. N. Shatokhin, M. N. Rumyantseva, A. M. Gaskov, “Pulsed laser deposition of ITO thin films and their characteristics”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 3,Pages <nobr>425

This article is cited in 26 papers

Manufacturing, processing, testing of materials and structures

Pulsed laser deposition of ITO thin films and their characteristics

D. A. Zuev^a, A. A. Lotin^a, O. A. Novodvorskii^a, F. V. Lebedev^a, O. D. Khramova^a, I. A. Petukhov^b, F. N. Putilin^b, A. N. Shatokhin^b, M. N. Rumyantseva^b, A. M. Gaskov^b

^a Institute on Laser and Information Technologies, Russian Academy of Scienses, Shatura, Moskovskaya obl.
^b Lomonosov Moscow State University, Faculty of Chemistry

Abstract: The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 $\times$ 10$^{-4}$ $\Omega$ cm has been achieved in the ITO films with content of Sn 5 at%.

Received: 18.10.2011
Accepted: 31.10.2011