E. E. Zavarin, S. N. Rodin, B. Yu. Klyuev, V. V. Lundin, A. E. Nikolaev, D. S. Arteev, A. V. Sakharov, A. F. Tsatsul'nikov, “Control of elastic stress during the growth of heterostructures (Al)GaN/SiC”, Fizika i Tekhnika Poluprovodnikov, 2025, Volume 59, Issue 6,Pages <nobr>315

International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Control of elastic stress during the growth of heterostructures (Al)GaN/SiC

E. E. Zavarin^ab, S. N. Rodin^ab, B. Yu. Klyuev^b, V. V. Lundin^a, A. E. Nikolaev^a, D. S. Arteev^ab, A. V. Sakharov^ab, A. F. Tsatsul'nikov^ab

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: An analysis based on in situ optical reflectometry of elastic stresses during the growth of AlGaN/SiC HEMT heterostructures by MOVPE is presented. It is shown that changing the growth conditions of the nucleation AlN and buffer GaN layers makes it possible to control the compressive strain. The effect of GaN doping by Fe and C atoms on elastic stresses is compared. Growth conditions of structures with a deflection of less than 20 microns for substrates up to 3 inches in diameter have been obtained.

Received: 05.05.2025
Revised: 27.06.2025
Accepted: 03.07.2025

DOI: 10.61011/FTP.2025.06.61564.8026