Characterization of AlGaN/GaN high frequency transistors with field-plate electrode on a silicon substrate

The electrical breakdown and microwave characteristics of AlGaN/GaN transistors with different field-plate electrodes, electrically connected to the source via a common bus, were studied. It was shown that adding field-effect electrodes increases the breakdown voltage, increases the gain by more than 2 dB in the frequency range up to 15 GHz.