A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudryk, L. A. Matveeva, V. V. Milenin, S. V. Novitskii, V. N. Sheremet, “Effect of microwave irradiation on the resistance of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 4,Pages 558

This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

Effect of microwave irradiation on the resistance of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts

A. E. Belyaev^a, A. V. Sachenko^a, N. S. Boltovets^b, V. N. Ivanov^b, R. V. Konakova^a, Ya. Ya. Kudryk^a, L. A. Matveeva^a, V. V. Milenin^a, S. V. Novitskii^a, V. N. Sheremet^a

^a Institute of Semiconductor Physics NAS, Kiev
^b Orion State Research Institute, Kyiv

Abstract: Temperature dependences of the contact resistivity $\rho_c$ of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that $\rho_c$ can decrease after microwave treatment in the entire temperature range of $\rho_c$ measurements (100–400 K). Good agreement between the theoretical and experimental $\rho_c (T)$ curves is attained and interpreted on the assumption that the dislocation density in the semiconductor near-surface region is varied as a result of microwave radiation.

Received: 24.08.2011
Accepted: 12.09.2011