N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, I. A. Slovinskii, M. V. Maksimov, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, “High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8,Pages <nobr>1063

This article is cited in 11 papers

Semiconductor physics

High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

N. V. Kryzhanovskaya^abc, A. E. Zhukov^abc, A. M. Nadtochiy^ac, I. A. Slovinskii^ac, M. V. Maksimov^ac, M. M. Kulagina^c, A. V. Savel'ev^ab, E. M. Arakcheeva^a, Yu. M. Zadiranov^c, S. I. Troshkov^c, A. A. Lipovskii^ab

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg

Abstract: Lasing at a wavelength of $>$ 1.3 $\mu$m has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 $\mu$m) with an active region based on InAs/InGaAs quantum dots.

Received: 26.01.2012
Accepted: 01.02.2012