Chun-Nan Chen, Sheng-Hsiung Chang, Wei-Long Su, Jen-Yi Jen, Yiming Li, “Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 9,Pages <nobr>1150

Spectroscopy, interaction with radiation

Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor

Chun-Nan Chen^a, Sheng-Hsiung Chang^b, Wei-Long Su^c, Jen-Yi Jen^a, Yiming Li^d

^a Quantum Engineering Laboratory, Department of Physics, Tamkang University, Tamsui, Taipei 251, Taiwan
^b Department of Optoelectronic Engineering, Far-East University, Hsin-Shih Town, Tainan, Taiwan
^c Department of Digital Mulitimedia Technology, Lee-Ming Institute of Technology, Tai-Shan, Taipei 24305, Taiwan
^d Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Abstract: In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.

Received: 14.11.2011
Accepted: 06.03.2012

Language: English