Raman scattering in the Bi$_2$(Te$_{0.9}$Se$_{0.1}$)$_3$ solid solution films

The Bi$_2$(Te$_{0.9}$Se$_{0.1}$)$_3$ solid solutions thin films are produced by “hot wall” thermal evaporation in vacuum. From the data of X-ray diffraction studies, atomic-force microscopy of the surface relief, and Raman spectroscopy, it is established that vacuum thermal annealing at a temperature of 200$^\circ$C for 1 h substantially increases the degree of film crystallization. The laser radiation excitation power optimal for studies of the Raman spectra of the Bi$_2$(Te$_{0.9}$Se$_{0.1}$)$_3$ films is determined.