R. V. Konakova, A. F. Kolomys, O. S. Litvin, O. B. Okhrimenko, V. V. Strelchuk, L. G. Linets, A. V. Svetlichnyi, “Transformation of a SiC/por-SiC/TiO<nobr>$_2$</nobr> structure during rapid thermal annealing”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 9,Pages <nobr>1244

This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Transformation of a SiC/por-SiC/TiO$_2$ structure during rapid thermal annealing

R. V. Konakova^a, A. F. Kolomys^a, O. S. Litvin^a, O. B. Okhrimenko^a, V. V. Strelchuk^a, L. G. Linets^b, A. V. Svetlichnyi^b

^a Institute of Semiconductor Physics NAS, Kiev
^b Taganrog Technological Institute of Southern Federal University

Abstract: The surface morphology and the Raman and photoluminescence spectra of a SiC/por-SiC/TiO$_2$ structure before and after rapid thermal annealing are studied. It is shown that rapid thermal annealing brings about the appearance of new bands in the Raman spectrum; these bands are characteristic of carbon compounds. An analysis of the spectra of photoluminescence excited by radiation with an energy lower than that of the band-gap energy in 6H-SiC has shown that the appearance of photoluminescence in porous silicon carbide is related to impurity states, which are formed at the surface due to products of chemical reactions in the course of etching.

Received: 27.02.2012
Accepted: 07.03.2012