Isochronous annealing of $n$-Si samples irradiated with 25-MeV protons

The Hall effect in proton-irradiated $n$-Si single crystals with the initial concentration of conduction electrons $N$ = 6 $\times$ 10$^{13}$ cm$^{-3}$ is studied experimentally. It is shown that, upon irradiation of the crystals with 25-MeV protons, the electron mobility anomalously increases. This increase is caused by the formation of metal inclusions in the crystals with ohmic junctions at the interfaces between the inclusions and semiconductor matrix. During isochronous annealing, shells nontransparent for conduction electrons made of negatively charged acceptor-type radiation defects are formed, resulting in a sharp decrease in the mobility. The oscillatory dependence of the mobility on the annealing temperature is attributed to variations in the degree of the screening of metal inclusions with negatively charged shells. The aggregates of interstitial atoms (metal inclusions) are annealed at 400$^\circ$C.