A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, M. M. Rozhavskaya, S. O. Usov, P. N. Brunkov, M. A. Sinicin, D. V. Davydov, M. N. Mizerov, N. A. Cherkashin, “Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10,Pages <nobr>1304

This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

A. F. Tsatsul'nikov^ab, V. V. Lundin^ab, E. E. Zavarin^ab, A. E. Nikolaev^ab, A. V. Sakharov^ab, M. M. Rozhavskaya^ab, S. O. Usov^ab, P. N. Brunkov^a, M. A. Sinicin^ab, D. V. Davydov^ab, M. N. Mizerov^b, N. A. Cherkashin^c

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Center for Material Elaboration & Structural Studies (CEMES) of the National Scientific Research (CNRS), 31055 Toulouse, France

Abstract: The results of studies of the properties of composite InGaN/GaN/InAlN heterostructures are reported. It is shown that, in the InAlN layer, there is substantial phase separation that brings about the formation of three-dimensional islands consisting of AlN–InAlN–AlN regions. The dimensions of these islands depend on the thickness of the InAlN layer and the conditions of epitaxial growth. Interruptions in the growth of InAlN provide a means for influencing the structural properties of the InAlN islands. The use of composite InGaN/GaN/InAlN heterostructures, in which the InGaN layer with a high In content serves as the active region in light-emitting diode structures, makes it possible to achieve emission in the yellow-red wavelength range 560–620 nm.

Received: 05.03.2012
Accepted: 15.03.2012