Temperature renormalization of the conduction electron $g$-factor in silicon

Temperature dependence of the conduction electron $g$-factor in silicon is investigated both theoretically and experimentally. Renormalization of the electron energy in the external magnetic field due to electron–phonon interaction is studied theoretically. Our calculations in the second order perturbation theory show, that the temperature renormalization of the electron $g$-factor is mainly caused by the spin-preserving intervalley scattering of the electrons with opposite spin orientations, whose contributions have opposite signs. Experiments on the electron spin resonance of the $n$-type Si samples exhibit almost linear decrease of the conduction electron $g$-factor with increasing temperature from $\sim$80 to 300 K. Calculated dependence $g(T)$ is in good agreement with the experimental data.