V. I. Nikolaev, A. Ya. Polyakov, S. V. Shapenkov, A. I. Stepanov, R. B. Timashov, V. M. Krymov, I. V. Shchemerov, N. R. Matros, A. A. Vasil’ev, L. A. Aleksanyan, A. V. Chernykh, “Electric properties of Cr$_2$O$_3$:Mg grown by epitaxy on the sapphire and gallium oxide substrates”, Fizika i Tekhnika Poluprovodnikov, 2025, Volume 59, Issue 8,Pages 466

Surface, interfaces, thin films

Electric properties of Cr$_2$O$_3$:Mg grown by epitaxy on the sapphire and gallium oxide substrates

V. I. Nikolaev^ab, A. Ya. Polyakov^c, S. V. Shapenkov^a, A. I. Stepanov^a, R. B. Timashov^a, V. M. Krymov^a, I. V. Shchemerov^c, N. R. Matros^c, A. A. Vasil’ev^c, L. A. Aleksanyan^c, A. V. Chernykh^c

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b Perfect Crystals LLC, 194223 St. Petersburg, Russia
^c National University of Science and Technology «MISIS», 119049 Moscow, Russia

Abstract: The electrical properties of p-type Cr$_2$O$_3$ crystalline layers doped with magnesium (from 0.1 to 5 wt.%) were studied using mist-CVD (Chemical Vapor Deposition) epitaxy on commercial sapphire substrates and native (100) wafers of bulk $n$-type $\beta$-Ga$_2$O$_3$. Good rectification was achieved for the Cr$_2$O$_3$:Mg/$\beta$-Ga$_2$O$_3$ $p$–$n$ heterojunction, enabling studies using admittance and deep-level transient spectroscopies for the first time.

Received: 19.09.2025
Revised: 13.11.2025
Accepted: 13.11.2025

DOI: 10.61011/FTP.2025.08.62188.8564