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Fizika i Tekhnika Poluprovodnikov, 2011 Volume 45, Issue 3, Pages 312–315 (Mi phts8480)

This article is cited in 2 papers

Surface, interfaces, thin films

Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

J. S. Vainshtein, O. I. Kon'kov, A. V. Kukin, O. S. Eltsina, L. V. Belyakov, O. M. Sreseli, E. I. Terukov

Ioffe Institute, St. Petersburg

Abstract: Hydrogenated amorphous silicon layers with crystalline nanoparticles have been produced by plasma-enhanced chemical vapor deposition, with tetrafluorosilane added to the gas mixture. The photoluminescence kinetics and photoelectric properties of structures based on these layers have been studied. The structures have a substantial photoresponse efficiency in the visible spectral range, with the position of the photoresponse maximum dependent on the applied bias.

Received: 24.06.2010
Accepted: 02.07.2010


 English version:
Semiconductors, 2011, 45:3, 302–305

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