N. A. Maleev, A. G. Kuz'menkov, A. S. Shulenkov, S. A. Blokhin, M. M. Kulagina, Yu. M. Zadiranov, V. G. Tikhomirov, A. G. Gladyshev, A. M. Nadtochiy, E. V. Nikitina, J. A. Lott, V. N. Svede-Shvets, N. N. Ledentsov, V. M. Ustinov, “Matrices of 960-nm vertical-cavity surface-emitting lasers”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 6,Pages <nobr>836

This article is cited in 2 papers

Semiconductor physics

Matrices of 960-nm vertical-cavity surface-emitting lasers

N. A. Maleev^ab, A. G. Kuz'menkov^ab, A. S. Shulenkov^c, S. A. Blokhin^ab, M. M. Kulagina^a, Yu. M. Zadiranov^a, V. G. Tikhomirov^d, A. G. Gladyshev^b, A. M. Nadtochiy^a, E. V. Nikitina^e, J. A. Lott^f, V. N. Svede-Shvets^g, N. N. Ledentsov^af, V. M. Ustinov^a

^a Ioffe Institute, St. Petersburg
^b Connector Optics LLC, St. Petersburg
^c Minsk Research Institute of Radiomaterials
^d Saint Petersburg Electrotechnical University "LETI"
^e St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^f VI Systems GmbH, D-10623 Berlin, Germany
^g OES Ltd

Abstract: Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 $\mu$m exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. The parameter variation of individual emitters within a matrix chip containing 5 $\times$ 7 elements does not exceed $\pm$20%.

Received: 20.12.2010
Accepted: 27.12.2010