V. G. Tikhomirov, N. A. Maleev, A. G. Kuz'menkov, Yu. V. Solov’ev, A. G. Gladyshev, M. M. Kulagina, V. E. Zemlyakov, K. V. Dudinov, V. B. Yankevich, A. V. Bobyl', V. M. Ustinov, “Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 10,Pages <nobr>1405

This article is cited in 5 papers

Semiconductor physics

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

V. G. Tikhomirov^a, N. A. Maleev^bc, A. G. Kuz'menkov^bc, Yu. V. Solov’ev^d, A. G. Gladyshev^cd, M. M. Kulagina^b, V. E. Zemlyakov^e, K. V. Dudinov^e, V. B. Yankevich^a, A. V. Bobyl'^b, V. M. Ustinov^b

^a Saint Petersburg Electrotechnical University "LETI"
^b Ioffe Institute, St. Petersburg
^c Connector Optics LLC, St. Petersburg
^d St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^e Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.

Abstract: The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures ($p$-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of $p$-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown.

Received: 15.02.2011
Accepted: 25.02.2011