Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, O. O. Ivent'eva, V. R. Larionov, V. D. Rumancev, “Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 1986, Volume 20, Issue 2,Pages 381

Short Notes

Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy

Zh. I. Alferov^a, V. M. Andreev^a, A. A. Vodnev^a, O. O. Ivent'eva^a, V. R. Larionov^a, V. D. Rumancev

^a Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

UDC: 621.315.592

Received: 13.07.1985
Accepted: 02.10.1985