I. I. Kolkovskii, V. V. Shusha, “Characteristic Properties of the Annealing of Recombination Centers in Neutron-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 11,Pages <nobr>1974

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Fizika i Tekhnika Poluprovodnikov, 1987 Volume 21, Issue 11, Pages 1974–1977 (Mi phts943)

Characteristic Properties of the Annealing of Recombination Centers in Neutron-Doped Silicon

I. I. Kolkovskii, V. V. Shusha