V. A. Bykovsky, Ya. I. Latushko, V. V. Petrov, “IR Absorption and Radiative Recombination on Radiation-Induced Defects in Aluminum-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 11,Pages <nobr>2039

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Fizika i Tekhnika Poluprovodnikov, 1987 Volume 21, Issue 11, Pages 2039–2043 (Mi phts955)

IR Absorption and Radiative Recombination on Radiation-Induced Defects in Aluminum-Doped Silicon

V. A. Bykovsky, Ya. I. Latushko, V. V. Petrov