A. N. Imenkov, V. V. Sherstnev, M. A. Sipovskaya, A. P. Astakhova, E. A. Grebenshchikova, A. M. Monakhov, K. V. Kalinina, G. Boissier, R. Teissier, A. N. Baranov, Yu. P. Yakovlev, “Frequency-tuned semiconductor whispering-gallery-mode laser ($\lambda$ = 2.35 $\mu$m) operating at room temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2009, Volume 35, Issue 18,Pages 50

This article is cited in 3 papers

Frequency-tuned semiconductor whispering-gallery-mode laser ($\lambda$ = 2.35 $\mu$m) operating at room temperature

A. N. Imenkov^a, V. V. Sherstnev^a, M. A. Sipovskaya^a, A. P. Astakhova^a, E. A. Grebenshchikova^a, A. M. Monakhov^a, K. V. Kalinina^a, G. Boissier^b, R. Teissier^b, A. N. Baranov^a, Yu. P. Yakovlev^a

^a Ioffe Institute, St. Petersburg
^b Institut d’Electronique du Sud (IES), Université Montpellier 2, CNRS, IES (UMR CNRS 5214), 34095 Montpellier,France

Abstract: Frequency tuning in a whispering gallery mode (WGM) semiconductor laser ($\lambda$ = 2.35 $\mu$m) with a sector (half-disk) cavity has been studied. Pumping by current pulses with a duration of up to 1.2 $\mu$s is accompanied by smooth tuning of the main WGM toward longer wavelengths by 30 $\mathring{\mathrm{A}}$ at room temperature, which is 1.4 times the intermode distance.

Received: 17.04.2009