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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2009 Volume 35, Issue 24, Pages 20–27 (Mi pjtf10118)

This article is cited in 2 papers

Generation of $\pi$ modes in semiconductor vertical-cavity surface-emitting lasers

G. S. Sokolovskiia, V. V. Dyudeleva, A. M. Monakhova, A. Yu. Savenkob, S. A. Blokhina, A. G. Deryagina, S. A. Zolotovskayaa, A. G. Kuz'menkova, S. N. Loseva, V. V. Luchininb, N. A. Maleeva, È. U. Rafailovc, V. Sibbetd, V. I. Kuchinskiia

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Carnegie Laboratory of Physics, Division of Electronic Engineering and Physics, University of Dundee, Nethergate, Dundee, DD1 4HN, UK
d School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK

Abstract: We have theoretically and experimentally studied optical emission from the side faces of mesa structures for vertical-cavity surface-emitting lasers (VCSELs). The results of spatially resolved spectral measurements show that a new type of lasing modes is found in VCSELs with circular mesa structures, which corresponds to the $\pi$ mode propagation along the mesa diameter with reflection from the sloped walls and the bottom Bragg mirror.

Received: 21.07.2009


 English version:
Technical Physics Letters, 2009, 35:12, 1133–1136

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