A. N. Alekseev, S. B. Aleksandrov, A. E. Byrnaz, L. E. Velikovskiy, I. E. Velikovskii, D. M. Krasovitsky, M. V. Pavlenko, S. I. Petrov, M. Yu. Pogorel'skii, Yu. V. Pogorel'skii, I. A. Sokolov, M. A. Sokolov, M. V. Stepanov, A. G. Tkachenko, A. P. Shkurko, V. P. Chalyi, “Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2008, Volume 34, Issue 7,Pages <nobr>58

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates

A. N. Alekseev, S. B. Aleksandrov, A. E. Byrnaz, L. E. Velikovskiy, I. E. Velikovskii, D. M. Krasovitsky, M. V. Pavlenko, S. I. Petrov, M. Yu. Pogorel'skii, Yu. V. Pogorel'skii, I. A. Sokolov, M. A. Sokolov, M. V. Stepanov, A. G. Tkachenko, A. P. Shkurko, V. P. Chalyi

ZAO Svetlana-Rost, St. Petersburg

Abstract: We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the growth conditions allowed the number of macroscopic cracks in the epilayers to be reduced and ensured the growth of heterostructures with two-dimensional electron gas, which are suitable for the creation of field-effect transistors. The saturation current of prototype devices based on the heterostructures grown on silicon substrates are comparable with the analogous parameter of devices grown on sapphire and exhibits no decrease related to thermal scattering at high bias voltages.