I. G. Aksyanov, V. N. Bessolov, Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova, S. A. Kukushkin, A. V. Osipov, S. N. Rodin, N. A. Feoktistov, Sh. Sharofidinov, M. P. Scheglov, “Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2008, Volume 34, Issue 11,Pages <nobr>54

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Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

I. G. Aksyanov^ab, V. N. Bessolov^ab, Yu. V. Zhilyaev^ab, M. E. Kompan^ab, E. V. Konenkova^ab, S. A. Kukushkin^ab, A. V. Osipov^ab, S. N. Rodin^ab, N. A. Feoktistov^ab, Sh. Sharofidinov^ab, M. P. Scheglov^ab

^a Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: A new approach is described, according to which the use of a thin silicon carbide (SiC) interlayer ensures the suppression of cracking and the simultaneous release of elastic strain in gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) on 1.5-inch Si(111) substrates. Using this method, 20-$\mu$m-thick GaN epilayers have been grown by HVPE on Si substrates with AlN (300 nm) and SiC (100 nm) interlayers. A high quality of the obtained GaN epilayers is confirmed by the photoluminescence spectra, where an exciton band with $h\nu_{\mathrm{max}}$ = 3.45 eV and a half-width (FWHM) of 68 meV is observed at 77 K, as well as by the X-ray rocking curves exhibiting GaN(0002) reflections with a half-width of $\omega_\theta$ = 600 arc sec.

Received: 09.10.2007