I. P. Sotnikov, G. È. Cirlin, N. V. Sibirev, V. G. Dubrovskii, Yu. B. Samsonenko, D. Litvinov, D. Gerthsen, “Hexagonal structures in GaAs nanowhiskers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2008, Volume 34, Issue 12,Pages <nobr>88

This article is cited in 10 papers

Hexagonal structures in GaAs nanowhiskers

I. P. Sotnikov^abc, G. È. Cirlin^abc, N. V. Sibirev^abc, V. G. Dubrovskii^abc, Yu. B. Samsonenko^abc, D. Litvinov^d, D. Gerthsen^d

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Physics and Technology Centre for Research and Education
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Technical University of Karlsruhe, D-76128 Karlsruhe, Germany

Abstract: We have studied the crystal structure of GaAs nanowhiskers grown by molecular beam epitaxy (MBE) on gold-activated GaAs(111)B substrates. The results of reflection high-energy electron diffraction and transmission electron microscopy showed that the MBE-grown GaAs nanowhiskers can form a crystal structure of sphalerite, wurtzite, or an intermediate phase close to 4H polytype, depending on the deposition conditions and the size of catalyst droplets. The results are interpreted within the framework of a thermodynamic model.

Received: 26.12.2007