I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, Yu. M. Shernyakov, V. M. Ustinov, N. V. Kryzhanovskaya, A. S. Payusov, I. L. Krestnikov, D. A. Lifshits, S. S. Mikhrin, A. R. Kovsh, “High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2008, Volume 34, Issue 23,Pages <nobr>27

This article is cited in 2 papers

High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm

I. I. Novikov^abc, N. Yu. Gordeev^abc, M. V. Maksimov^abc, A. E. Zhukov^abc, Yu. M. Shernyakov^abc, V. M. Ustinov^abc, N. V. Kryzhanovskaya^abc, A. S. Payusov^abc, I. L. Krestnikov^abc, D. A. Lifshits^abc, S. S. Mikhrin^abc, A. R. Kovsh^abc

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Physics and Technology Centre for Research and Education
^c Innolume GmbH, Konrad-Adenauer-Allee 11, 44263, Dortmund, Germany

Abstract: We have created and studied the properties of semiconductor lasers on InAs/GaAs quantum dots with a maximum modal gain of 46 cm$^{-1}$ at a wavelength of 1325 nm achieved due to increased optical confinement factor and optimized heterostructure growth parameters. In a wavelength interval of 1315–1345 nm, the modal gain exceeded 20 cm$^{-1}$ at a current density of 500 A/cm$^2$.

Received: 14.05.2008