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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2008 Volume 34, Issue 24, Pages 75–82 (Mi pjtf10463)

This article is cited in 22 papers

Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskiia, V. V. Dyudeleva, S. N. Loseva, S. A. Zolotovskayaa, A. G. Deryagina, V. I. Kuchinskiia, È. U. Rafailovb, W. Sibbettc

a Ioffe Institute, St. Petersburg
b Carnegie Laboratory of Physics, Division of Electronic Engineering and Physics, University of Dundee, Nethergate, Dundee, DDI 4HN, UK
c School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews, KY16 9SS, UK

Abstract: We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178$^\circ$ and 170$^\circ$, which provided beams with a central spot diameter of 100 and 10 $\mu$m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 $\mu$m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

Received: 26.03.2008


 English version:
Technical Physics Letters, 2008, 34:12, 1075–1078

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