A. T. Lupu, A. Z. Mereutse, I. B. Puzin, A. V. Syrbu, G. I. Suruchanu, M. K. Sheĭnkman, G. K. Shervarly, V. P. Yakovlev, “ELECTROPHYSICAL CHARACTERISTICS OF LOW-THRESHOLD (IN=1,3 MA, T=300-K) QUANTUM-DIMENSIONAL ALGAAS-LASER DIODE WITH OVERGROWN HETEROSTRUCTURE MANUFACTURED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 1991, Volume 17, Issue 3,Pages <nobr>4

ELECTROPHYSICAL CHARACTERISTICS OF LOW-THRESHOLD (IN=1,3 MA, T=300-K) QUANTUM-DIMENSIONAL ALGAAS-LASER DIODE WITH OVERGROWN HETEROSTRUCTURE MANUFACTURED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE

A. T. Lupu, A. Z. Mereutse, I. B. Puzin, A. V. Syrbu, G. I. Suruchanu, M. K. Sheĭnkman, G. K. Shervarly, V. P. Yakovlev