D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, A. O. Monastyrenko, “Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 24,Pages 31

Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon

D. A. Kudriashov^a, A. S. Gudovskikh^ab, A. A. Maksimova^b, A. I. Baranov^a, A. V. Uvarov^a, I. A. Morozov^a, A. O. Monastyrenko^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The critical influence of the indium-tin oxide films formation rate on the degradation degree of the $\alpha$-Si:H/$c$-Si interface during magnetron sputtering is shown. It was found that when the distance between the magnetron and the sample is 10 cm, the lifetime decreases from 2 ms to 10 us, while when this distance is reduced to 7 cm, due to a two-times decrease in the deposition time, a decrease is observed from 1.5 ms to 450 us.

Keywords: silicon, plasma-enhance deposition, thin films, passivation, ITO, solar cells.

Received: 01.07.2021
Revised: 01.07.2021
Accepted: 16.09.2021

DOI: 10.21883/PJTF.2021.24.51796.18945