A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maksimov, S. Breuer, “Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 24,Pages <nobr>51

Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers

A. S. Payusov^a, M. I. Mitrofanov^ab, G. O. Kornyshov^c, A. A. Serin^a, G. V. Voznyuk^a, M. M. Kulagina^a, V. P. Evtikhiev^a, N. Yu. Gordeev^a, M. V. Maksimov^c, S. Breuer^d

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^d Institute of Applied Physics, Technische Universität Darmstadt, Darmstadt, Germany

Abstract: We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.

Keywords: focused ion beam, semiconductor laser, optical waveguide, single mode lasing.

Received: 28.07.2021
Revised: 12.09.2021
Accepted: 28.09.2021

DOI: 10.21883/PJTF.2021.24.51801.18980