Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction

The analysis of internal optical loss and internal quantum efficiency in 1.3 $\mu$m-range InAlGaAsP/AlGaAs a composite $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20$^{\circ}$С and 90$^{\circ}$С, respectively.