Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region

The positioning of In$_{0.8}$Ga$_{0.2}$As quantum dots (QDs) array in the $i$-region of the solar cell (SC) on its photogenerated current and the dark saturation currents, which determine the operating voltage of the device, have been investigated. It was found that the indicated photoelectric characteristics depend on the location of the QD array relative to the electric field of the $p$–$n$ junction. The displacement of the QD array to the boundary of the weakly doped base leads to a decrease in the photogenerated current. But at the same time, the voltage drop effect, which is well-known for nanoheterostructural SC, is minimal.