V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 21,Pages <nobr>32–35</nobr>

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021 Volume 47, Issue 21, Pages 32–35 (Mi pjtf4639)

This article is cited in 2 papers

MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates

V. O. Gridchin^ab, R. R. Reznik^b, K. P. Kotlyar^ab, A. S. Dragunova^ac, N. V. Kryzhanovskaya^ac, A. Yu. Serov^b, S. A. Kukushkin^d, G. E. Cirlin^abe

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg State University
^c National Research University "Higher School of Economics", St. Petersburg Branch
^d Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: In this work, InGaN nanowires with a high In content were grown, for the first time, on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range.

Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon.

Received: 01.06.2021
Revised: 12.07.2021
Accepted: 19.07.2021

DOI: 10.21883/PJTF.2021.21.51626.18894

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© Steklov Math. Inst. of RAS, 2024