Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression

The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power is saturated and the lasing is quenched, as well as an increase in the peak power. In microdisks with a diameter of 19 $\mu$m, the highest output optical power in the continuous wave regime was 9.4 mW.