The effect of negative magnetoresistance in silicon to create multifunctional sensors

It was found that a feature of negative magnetoresistance in silicon containing nanoclusters of manganese atoms is its high sensitivity to various external influences. The regularities of the change in the negative magnetoresistance in silicon containing nanoclusters of manganese atoms from temperature, illumination, and the magnitude of the electric and magnetic fields are determined. The possibility of creating a new class of multifunctional sensors of physical quantities based on one single silicon crystal containing nanoclusters of manganese atoms is shown.