L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavluchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 18,Pages <nobr>3

This article is cited in 3 papers

A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology

L. K. Markov^a, S. A. Kukushkin^b, I. P. Smirnova^a, A. S. Pavluchenko^a, A. S. Grashchenko^c, A. V. Osipov^b, G. V. Svyatets^d, A. E. Nikolaev^a, A. V. Sakharov^a, V. V. Lundin^a, A. F. Tsatsul'nikov^ae

^a Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg State University
^d Scientific and Technical Center New Technologies, Petersburg, Russia
^e Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: The technique and technology for fabricating both LED chips and packaged LEDs based on InGaN/GaN heterostructures grown on novel SiC/Si substrates synthesized by the method of matched atomic substitution have been described. The current-voltage characteristics, luminescence spectra, and the current dependences of output power and external quantum efficiency have been studied. It is shown that the presence of pores naturally formed in the SiC/Si substrate during its growth leads to a substantial increase in the quantum efficiency of LEDs in comparison with that of LEDs fabricated on silicon without a SiC sublayer.

Keywords: LEDs, silicon LEDs, silicon-carbide LEDs on silicon, silicon carbide on silicon, AlInGaN/GaN/SiC/Si heterostructures.

Received: 18.05.2021
Revised: 18.05.2021
Accepted: 01.06.2021

DOI: 10.21883/PJTF.2021.18.51462.18877