V. I. Egorkin, S. V. Obolensky, V. E. Zemlyakov, A. A. Zaitsev, V. I. Garmash, “Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 18,Pages 15

Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process

V. I. Egorkin^a, S. V. Obolensky^b, V. E. Zemlyakov^a, A. A. Zaitsev^a, V. I. Garmash^a

^a National Research University of Electronic Technology
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si$_3$N$_4$ layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage.

Keywords: ion implantation, breakdown voltage, GaN, power transistor.

Received: 05.04.2021
Revised: 27.05.2021
Accepted: 04.06.2021

DOI: 10.21883/PJTF.2021.18.51465.18805