Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates

Light emitting III – N heterostructures were grown by metalorganic chemical vapor deposition on the SiC/Si (111) templates (substrates) formed by the method of matched substitution of atoms. Investigations of the optical and structural properties of heterostructures were carried out in order to reveal the formation of defects in the structures. It is shown that features of the growth of the (Al, Ga)N buffer layers in such structuresare associated with the presence of pores in the Si substrate under SiC/Si interface. Applying of the optimal design of the buffer layer allows significantly reduce the dislocation density and form active region with high structural quality.