V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov, “Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 15,Pages <nobr>23

Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy

V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: Resistive switching effect of separate dislocations in Ag/Ge/Si(001) memristor structures was demonstrated experimentally by Conductive Atomic Force Microscopy. Hysteresis loops typical for bipolar resistive switching were observed in the current-voltage curves of the dislocations due to formation and rapture of Ag filament in the Ge layer as a result of Ag$^+$ ion drift along the dislocation core.

Keywords: resistive switching, memristor, Ge/Si heterostructures, dislocations, ion sputtering, conductive atomic force microscopy.

Received: 24.03.2021
Revised: 27.04.2021
Accepted: 30.04.2021

DOI: 10.21883/PJTF.2021.15.51229.18784