Gan-on-silicon growth features: controlled plastic deformation

Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapor deposition. Plastic deformations of the substrate are observed that occurred during growth at temperatures of 930 – 975$^\circ$C due to effective accumulation of compressive stress in the film. A method is proposed for controlled plastic deformation of silicon by high-temperature annealing with simultaneous in situ growth of a SiN$_x$ layer after the heterostructure is grown. This approach makes it possible to simplify the optimization of architecture of gallium nitride heterostructures for various technological task.