Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD

The possibility of creating a lower junction of multijunction A$_3$B$_5$/Si solar cells based on an $n$-GaP/$p$-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature $(T_s)$ not exceeding 650$^{\circ}$C. Photoelectric properties of structures grown at 650$^{\circ}$C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.