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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021 Volume 47, Issue 11, Pages 30–32 (Mi pjtf4773)

This article is cited in 1 paper

The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)

D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov

Lobachevsky State University of Nizhny Novgorod

Abstract: Conducting ferromagnetic nanosized filaments consisting of Ni atoms are formed in thin ZrO$_2$(Y)/Ni films using an atomic force microscope probe. The contact of the probe to such films (a virtual composite memristor device) exhibits resistive switching of the bipolar type associated with the destruction and restoration of Ni filaments in the ZrO$_2$(Y) film. The region in which the conductive filament emerges onto the surface of the ZrO$_2$(Y) film manifests itself in the magnetic force image as a single-domain ferromagnetic particle.

Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.

Received: 21.12.2020
Revised: 07.03.2021
Accepted: 09.03.2021

DOI: 10.21883/PJTF.2021.11.51004.18665


 English version:
Technical Physics Letters, 2021, 47:7, 539–541

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© Steklov Math. Inst. of RAS, 2024