Pulse response characteristics of silicon photovoltaic converters irradiated with low-energy protons

The effect of irradiation with low-energy protons on the pulse characteristics of silicon photovoltaic structures is investigated. For measurements, bipolar rectangular voltage pulses with a constant amplitude of 10 mV and a frequency of 200 kHz and 1 MHz were used. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10$^{15}$ cm$^{-2}$ creates a region with a high concentration of radiation defects in the SCR of the $n^+$–$p$ transition. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.