Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents

Characteristics of semiconductor lasers based on asymmetric heterostructures with broadened lateral waveguide of mesa-stripe design have been studied at ultrahigh levels of pulsed current pumping. A peak power of 5.1 W was demonstrated at a drive current amplitude of 10 A. Three types of spatial dynamics of laser emission were determined: slow ($\sim$200 ns) rearrangement of the intensity along the lateral near field is characteristic of the initial level of drive currents, fast processes of mode competition ($\sim$10 ns) are characteristic of moderate drive currents, and rearrangements are not repeated from pulse to pulse, being of chaotic nature, at maximum drive currents.