N. L. Grevtsov, E. B. Chubenko, V. P. Bondarenko, I. M. Gavrilin, A. A. Dronov, S. A. Gavrilov, “The effect of porous silicon oxidation on electrochemical formation of porous silicon–indium nanocomposites”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 7,Pages <nobr>49

This article is cited in 1 paper

The effect of porous silicon oxidation on electrochemical formation of porous silicon–indium nanocomposites

N. L. Grevtsov^a, E. B. Chubenko^a, V. P. Bondarenko^a, I. M. Gavrilin^b, A. A. Dronov^b, S. A. Gavrilov^b

^a Belarussian State University of Computer Science and Radioelectronic Engineering
^b National Research University of Electronic Technology

Abstract: he oxidation of scaffold of porous silicon in air at 300$^\circ$C or an aqueous HNO$_3$ solution (50 vol%) is found to improve pore filling in electrochemical deposition of indium into it. Due to incomplete oxidation of the porous silicon scaffold, the peak in indium concentration shifts away from the surface, deeper into the porous layer. The greatest effect–the highest indium concentration in pores–is observed for porous silicon oxidized in the HNO$_3$ solution.

Keywords: porous silicon, indium, electrochemical deposition, oxidation, nanoparticles, nanothreads.

Received: 27.10.2020
Revised: 29.12.2020
Accepted: 29.12.2020

DOI: 10.21883/PJTF.2021.07.50801.18599