Electron-beam crystallization of thin films of amorphous silicon suboxide

Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 ($\alpha$-SiO$_{0.5}$:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.