A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 6,Pages <nobr>51

This article is cited in 1 paper

Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space

A. S. Puzanov^a, V. V. Bibikova^a, I. Yu. Zabavichev^a, E. S. Obolenskaya^a, E. A. Tarasova^a, N. V. Vostokov^b, S. V. Obolensky^a

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Transient ionization processes occurring in a low-barrier GaAs Mott diode under the influence of heavy charged particles from outer space and laser pulses that imitate such particles are analyzed theoretically. The response of a diode to the influence of an As$^+$ ion with an energy of 200 MeV, which corresponds to a linear energy transfer of 26 MeV cm$^2$/mg, is compared with the response to the influence of optical radiation pulses of various durations (10–1000 fs) with a photon energy exceeding the band gap of GaAs.

Keywords: Mott diode, heavy charged particles from outer space, femtosecond laser.

Received: 02.11.2020
Revised: 11.12.2020
Accepted: 16.12.2020

DOI: 10.21883/PJTF.2021.06.50761.18607