S. V. Obolensky, E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, “A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 5,Pages <nobr>38

This article is cited in 3 papers

A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation

S. V. Obolensky^a, E. V. Volkova^a, A. B. Loginov^b, B. A. Loginov^c, E. A. Tarasova^a, A. S. Puzanov^a, S. A. Korolev^d

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Lomonosov Moscow State University
^c National Research University of Electronic Technology
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The electrical parameters and surface morphology of the GaAs structures of ring and circular Schottky diodes before and after irradiation by neutrons with an energy of $\sim$1 MeV have been experimentally studied. Using atomic force microscopy, volumetric radiation defects have been revealed. The density of electrons has been determined and their mobility before and after irradiation has been estimated from the results of the $C$–$V$ measurements. Based on the results obtained by these two techniques, a method for determining the average size of the space charge regions of the radiation defect clusters has been proposed.

Keywords: radiation defect clusters, $C$–$V$ method, atomic force microscopy.

Received: 02.11.2020
Revised: 25.11.2020
Accepted: 26.11.2020

DOI: 10.21883/PJTF.2021.05.50676.18608