A. A. Koryakin, Yu. A. Eremeev, A. V. Osipov, S. A. Kukushkin, “The influence of the porosity of silicon layer on the elastic properties of hybrid SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 3,Pages <nobr>25

This article is cited in 4 papers

The influence of the porosity of silicon layer on the elastic properties of hybrid SiC/Si substrates

A. A. Koryakin^a, Yu. A. Eremeev^b, A. V. Osipov^c, S. A. Kukushkin^cd

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^d Peter the Great St. Petersburg Polytechnic University

Abstract: In this work, the influence of porosity of silicon layer with macropores on elastic and thermomechanical properties of SiC/Si substrates synthesized by the atom substitution method has been studied. Calculation of elastic constants of porous silicon has been performed by the finite element method. The results of calculation of the Young's modulus in [111] direction are in agreement with the estimates obtained by the nanoindentation method of SiC/Si(111) substrates. The proposed theoretical model can be used for determination of elastic properties of SiC/Si substrates of different orientation.

Keywords: porous silicon, silicon carbide, elastic properties.

Received: 12.10.2020
Revised: 20.10.2020
Accepted: 20.10.2020

DOI: 10.21883/PJTF.2021.03.50571.18579