S. V. Morozov, V. V. Utochkin, V. V. Rumyantsev, M. A. Fadeev, A. A. Razova, V. Ya. Aleshkin, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, “Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 3,Pages <nobr>51

This article is cited in 2 papers

Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy

S. V. Morozov^ab, V. V. Utochkin^a, V. V. Rumyantsev^a, M. A. Fadeev^a, A. A. Razova^a, V. Ya. Aleshkin^a, V. I. Gavrilenko^a, N. N. Mikhailov^c, S. A. Dvoretskii^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: An express technique for characterizing narrow-gap waveguide heterostructures with the HgCdTe/CdHgTe quantum wells is proposed, which is based on an analysis of their room-temperature luminescence response. Advantages and constraints of this characterization technique are discussed in comparison with methods for more detailed diagnostics that entail photoluminescence and photoconductivity measurements in a wide temperature range.

Keywords: HgCdTe, quantum wells, photoluminescence, stimulated emission.

Received: 28.10.2020
Revised: 30.10.2020
Accepted: 30.10.2020

DOI: 10.21883/PJTF.2021.03.50578.18603