A. S. Gudovskikh, D. A. Kudriashov, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 2,Pages <nobr>49

This article is cited in 5 papers

A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition

A. S. Gudovskikh^ab, D. A. Kudriashov^a, A. I. Baranov^a, A. V. Uvarov^a, I. A. Morozov^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: For the first time, the possibility of forming boron phosphide layers by plasma-enhanced atomic-layer deposition at a temperature of 250$^{\circ}$C has been shown. Also the possibility of their use as a selective hole contact to silicon for solar cell application has been experimentally demonstrated.

Keywords: boron phosphide, silicon, selective contact, solar cell.

Received: 23.09.2020
Revised: 13.10.2020
Accepted: 13.10.2020

DOI: 10.21883/PJTF.2021.02.50547.18556