V. B. Bondarenko, A. V. Filimonov, Ravi Kumar, “A chaotic potential of charged dislocations in group III-nitride heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 1,Pages <nobr>12

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A chaotic potential of charged dislocations in group III-nitride heterojunctions

V. B. Bondarenko^a, A. V. Filimonov^ab, Ravi Kumar^c

^a Peter the Great St. Petersburg Polytechnic University
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Indian Institute of Technology Madras, Chennai, India

Abstract: The structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the junction plane are determined. It is shown that the parameters of the chaotic potential depend on the density of surface states and the concentration of dislocations.

Keywords: chaotic potential, size effect, heterocontact of III-nitrides, two-dimensional electron gas.

Received: 28.08.2020
Revised: 15.09.2020
Accepted: 16.09.2020

DOI: 10.21883/PJTF.2021.01.50450.18532